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The emerging atomic layer materials offer a remarkably wide range of building blocks of nanostructures. Key advantages of these van der Waals materials include a broad span of energy gaps, flexibility of stacking different types of materials to form heterostructures, and the tunability in material properties by doping and strain. This talk will be focused on our recent work in probing the atomic and electronic structure of transition metal dichalcogenides (TMDs) heterostructures, including both vertical and lateral structure. I will first show that in vertically stacked MoS₂/WSe₂heterostructures, how the interlayer coupling can be used as a new designing

parameter to create a lateral 2D electronic superlattices. For lateral WSe₂-MoS₂ heterostructure, we present a novel method to determine the anisotropic strain based on Moiré pattern imaging. The 2×2 strain tensor is imaged with nanometer spatial resolution. We also determine the band offset across the junction and show that the strain effect converts the otherwise type-II into type-I band alignment. Moreover, a “line interface specific” electronic structure due to the specific bonding configuration is discovered at the interface.

Dr. Chendong Zhang obtained his Ph.D in condensed matter physics from the Institute of Physics, Chinese Academy of Sciences in 2011. From 2011 to 2016, he worked in the University of Texas at Austin as a postdoctoral scholar. He joined the Wuhan University in 2017 as a professor in the School of Physics and Technology. He has specialized in low dimensional quantum materials, scanning tunneling microscopy/spectroscopy and the thin film growth.